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参数资料
| 型号： | FDR8508P_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 274K |
| 代理商： | FDR8508P_NL |
FDR8508P
FDR8508P Rev. C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
A
-30
V
BVDSS/
TJ
Breakdown Voltage Temperature
Coefficient
ID = -250
A, Referenced to 25°C
24
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
-1
A
IGSSF
Gate-Body Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
A
-1
-1.8
-3
V
VGS(th) /
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250
A, Referenced to 25°C
-4
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -3 A
VGS = -10 V, ID = -3 A, TJ = 125
°C
VGS = -4.5 V, ID = -2.3 A
0.040
0.057
0.058
0.052
0.078
0.086
ID(on)
On-State Drain Current
VGS = -10 V, VDS = -5 V
-20
A
gFS
Forward Transconductance
VDS = -5 V, ID = -3 A
9
mS
Dynamic Characteristics
Ciss
Input Capacitance
750
pF
Coss
Output Capacitance
220
pF
Crss
Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V, f = 1.0 MHz
100
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
12
22
ns
tr
Turn-On Rise Time
14
25
ns
td(off)
Turn-Off Delay Time
24
38
ns
tf
Turn-Off Fall Time
VDD = -15 V, ID = -1 A,
VGS = -10 V, RGEN = 6
16
27
ns
Qg
Total Gate Charge
8
12
nC
Qgs
Gate-Source Charge
1.8
nC
Qgd
Gate-Drain Charge
VDS = -15 V, ID = -3A,
VGS = -5 V,
3nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.67
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = -0.67 A
(Note 2)
-0.75
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the users board design. RθJA shown below for single
device operation on FR-4 board instill air.
156
OC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
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