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| 型号： | FDS3512 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 4A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 634pF @ 40V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
May 2001
FDS3512
80V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 4.0 A, 80 V
R DS(ON) = 70 m ? @ V GS = 10 V
R DS(ON) = 80 m ? @ V GS = 6 V
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
? Low gate charge (13nC Typical)
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D
D
D
D
5
6
4
3
7
2
SO-8
S
S
S
G
8
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
80
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
4.0
A
– Pulsed
30
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1.0
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS3512
Device
FDS3512
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDS3512 Rev B1 (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS3572 | MOSFET N-CH 80V 8.9A 8SOIC |
| FDS3580 | MOSFET N-CH 80V 7.6A 8SOIC |
| FDS3590 | MOSFET N-CH 80V 6.5A 8SOIC |
| FDS3672 | MOSFET N-CH 100V 7.5A 8-SOIC |
| FDS3692 | MOSFET N-CH 100V 4.5A SO-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3512_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3570 | 功能描述:MOSFET SO-8 N-CH 80V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3570 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS3570_00 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
| FDS3570TR | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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