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参数资料
| 型号： | FDS4501H |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Complementary PowerTrench Half-Bridge MOSFET |
| 中文描述： | 9300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 1390K |
| 代理商： | FDS4501H |
FDS4501H Rev C(W)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
15
15
5
15
38
40
10
25
17
13
4
2.5
5
2.0
27
27
10
27
61
64
20
40
27
21
ns
ns
ns
ns
nC
nC
nC
Q1
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q1
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5V, R
GEN
= 6
Q1
V
DS
= 15 V, I
D
= 9.3 A, V
GS
= 4.5 V
Q2
V
DS
= 15 V, I
D
= –2.4 A,V
GS
= –4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
2.1
–2.1
1.2
–1.2
A
V
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
V
GS
= 0 V, I
S
= –2.1 A
(Note 2)
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a
1 in
pad of 2 oz
copper
b) 105°C/W when
mounted on a 0.04
in
pad of 2 oz
copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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