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参数资料
| 型号： | FDS4501H |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Complementary PowerTrench Half-Bridge MOSFET |
| 中文描述： | 9300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 6/8页 |
| 文件大小： | 1390K |
| 代理商： | FDS4501H |
FDS4501H Rev C(W)
Typical Characteristics: Q1
0
3
6
9
12
15
18
21
0
0.5
1
1.5
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10.0V
6.0V
4.5V
2.5V
3.0V
3.5V
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
I
D
, DIRAIN CURRENT (A)
V
GS
= 2.5V
4.5V
6.0V
3.0V
3.5V
10V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 9.3A
V
GS
= 10V
0
0.02
0.04
0.06
0.08
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 4.7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5.0V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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| FDS4672A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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