参数资料
型号: FDS4935A
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CHAN 30V 7A 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 21nC @ 5V
输入电容 (Ciss) @ Vds: 1233pF @ 15V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS4935ADKR
Typical Characteristics
50
V GS = -10V
-6.0V
-5.0V
-4.5V
2.4
2.2
40
30
-4.0V
2
1.8
V GS = -3.5V
-4.0V
20
-3.5V
1.6
1.4
-4.5V
-5.0V
10
-3.0V
1.2
-6.0V
-10V
1
0
0.8
0
1
2
3
4
5
0
10
20
30
40
50
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I D = -7A
V GS = -10V
-I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
I D = -3.5A
1.4
0.06
1.2
1
0.8
0.6
0.04
0.02
0
T A = 25 o C
T A = 125 o C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
50
T J , JUNCTION TEMPERATURE ( o C)
Figure 3. On-Resistance Variation with
Temperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
V DS = -5.0V
T A = -55 o C
25 o C
10
V GS = 0V
30
20
10
0
125 o C
1
0.1
0.01
0.001
0.0001
T A = 125 o C
25 o C
-55 o C
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935A Rev A(W)
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相关代理商/技术参数
参数描述
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