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| 型号： | FDS4935BZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET P-CH DUAL 30V 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Die Revision 05/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1360pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS4935BZDKR |
September 2006
tm
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
–6.9 A, –30 V. R DS(ON) = 22 m
R DS(ON) = 35 m
@ V GS = –10 V
@ V GS = – 4.5 V
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
Extended V GSS range (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R DS(ON)
supply designs with higher overall efficiency.
High power and current handling capability
D D2
D D1
D D1
D D2
5
6
Q1
4
3
7
2
S2 S
S1 G
SO-8
Pin 1 SO-8
S
G2
S
G1
8
Q2
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–30
+25
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–6.9
A
– Pulsed
–50
P D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
(Note 1c)
1.0
0.9
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
C
Thermal Characteristics
R
R
JA
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDS4935BZ
Device
FDS4935BZ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2006 Fairchild Semiconductor Corporation
FDS4935BZ Rev B1 (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4935BZ-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS4935BZ Series 30 V 22 mOhm Dual 30 Volt P-Channel PowerTrench Mosfet SOIC-8 |
| FDS4953 | 功能描述:MOSFET SO-8 P-CH DUAL -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4953_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 30V P-Channel PowerTrench MOSFET |
| FDS5170N7 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS5351 | 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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