参数资料
型号: FDS5670
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH 60V 10A 8-SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 10A
开态Rds(最大)@ Id, Vgs @ 25° C: 14 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 70nC @ 10V
输入电容 (Ciss) @ Vds: 2900pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS5670DKR
Typical Characteristics
60
V GS = 10V
6V
2
50
5V
4.5V
1.8
40
1.6
V GS = 4.0V
30
4V
1.4
4.5V
5.0V
20
1.2
6.0V
7.0V
10
0
3.5V
1
0.8
10V
0
1
2
3
4
0
10
20
30
40
50
60
2
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
0.05
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.8
I D = 10A
V GS = 10V
0.04
I D = 10A
1.6
1.4
1.2
0.03
T A = 125 C
T A = 25 C
1
0.8
0.6
0.4
0.02
0.01
0
o
o
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( C)
60
o
Figure 3. On-Resistance Variation
with Temperature.
100
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
T A = -55 C
25 C
50
V DS =5V
o
o
10
V GS =0
125 C
o
40
1
T J =125 o C
30
20
10
0
0.1
0.01
0.001
0.0001
25 o C
-55 o C
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS5670 Rev. B
相关PDF资料
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相关代理商/技术参数
参数描述
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