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参数资料
| 型号： | FDS6576 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 11A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 11A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4044pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS6576DKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSSF
I GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = 0 V, I D = –250 A
I D = –250 A, Referenced to 25 C
V DS = –16 V, V GS = 0 V
V GS = 12 V, V DS = 0 V
V GS = –12 V, V DS = 0 V
–20
–13
–1
100
–100
V
mV/ C
A
nA
nA
On Characteristics
(Note 2)
V GS(th)
V GS(th)
T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 A
I D = –250 A, Referenced to 25 C
V GS = –4.5 V, I D = –11 A
–0.6
–0.83
3.5
8.2
–1.5
14
V
mV/ C
m
On–Resistance
V GS = –2.5 V, I D = –8.8 A
V GS = –4.5 V, I D = –11 A, T J =125 C
11.5
11.1
20
23
I D(on)
On–State Drain Current
V GS = –4.5 V, V DS = –5 V
–25
A
g FS
Forward Transconductance
V DS = –4.5 V,
I D = –11 A
50
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V,
f = 1.0 MHz
V GS = 0 V,
4044
955
504
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V DD = –10 V, I D = –1 A,
V GS = –4.5 V, R GEN = 6
18
17
124
79
32
31
198
126
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = –10 V,
V GS = –4.5 V
I D = –11 A,
43
7
60
nC
nC
Q gd
Gate–Drain Charge
12
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = –2.1 A
(Note 2)
–0.66
–1.2
V
Notes:
1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in 2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in 2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
FDS6576 Rev E 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6576 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD 8-SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, 8-SOIC |
| FDS6576 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6576_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDS6576_Q | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6576-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6576 Series 20 V 14 mOhm P-Channel 2.5V Specified PowerTrench?MOSFET-SOIC-8 |
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