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参数资料
| 型号： | FDS6670A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2220pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS6670ADKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
26
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = 24 V,
V GS = 0 V
1
μ A
V DS = 24 V, V GS = 0 V, T J =55 ° C
10
μ A
I GSS
Gate–Body Leakage
V GS = ± 20 V,
V DS = 0 V
± 100
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
1
1.8
3
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–5.3
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS = 10 V,
V GS = 4.5 V,
I D = 13 A
I D = 10.5 A
6
7.2
8
10
m ?
V GS = 10 V, I D = 13 A, T J =125 ° C
8.5
14
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 15 V,
V DS = 5 V
I D = 13 A
50
55
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V,
f = 1.0 MHz
V GS = 0 V,
2220
535
200
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
1.7
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 10 V,
V GS = 10 V,
V DS = 15 V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 13 A,
11
13
40
13
21
6
19
24
64
24
30
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
7
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = 2.1 A (Note 2)
0.7
1.2
V
t rr
Diode Reverse Recovery Time
31
nS
Q rr
Diode Reverse Recovery Charge
I F = 13 A,
d iF /d t = 100 A/μs
21
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
50°C/W when mounted
on a 1in 2 pad of 2 oz
b) 125°C/W when mounted on a
minimum pad.
copper
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDS6670A Rev F (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6670A_03 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrench MOSFET |
| FDS6670A_Q | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6670AS | 功能描述:MOSFET 30V N-CH POWER TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6670AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6670AS_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFETa?￠ |
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