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参数资料
| 型号： | FDS6673BZ_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 14.5A 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.8 毫欧 @ 14.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 124nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4700pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
FDS6673BZ _F085
P-Channel PowerTrench ? MOSFET
-30V, -14.5A, 7.8m ?
July 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
Features
Max r DS(on) = 7.8m ?, V GS = -10V, I D = -14.5A
Max r DS(on) = 12m ?, V GS = -4.5V, I D = -12A
Extended V GS range (-25V) for battery applications
HBM ESD protection level of 6.5k V typical (note 3)
load switching applications common in
Computers and Portable Battery Packs.
Notebook
High performance trench technology for extremely low
r DS(on)
High power and current handling capability
RoHS compliant
Qualified to AEC Q101
D
D
D
D
5
6
4
3
SO-8
S
S
S
G
7
8
2
1
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-30
±25
Units
V
V
I D
P D
Drain Current -Continuous
-Pulsed
Power Dissipation for Single Operation
(Note1a)
(Note1a)
(Note1b)
-14.5
-75
2.5
1.2
A
A
W
(Note1c)
1.0
T J , T STG
Operating and Storage Temperature
-55 to 150
°C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50
25
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ _F085
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?200 9 Fairchild Semiconductor Corporation
FDS6673BZ _F085 Rev. A
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6673BZ | MOSFET P-CH 30V 14.5A 8-SOIC |
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| FDS6676AS | MOSFET N-CH 30V 14.5A 8-SOIC |
| FDS6679AZ | MOSFET P-CH 30V 13A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6675 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6675 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS6675_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6675A | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6675BZ | 功能描述:MOSFET -30V P-Channel PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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