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参数资料
| 型号： | FDS6679 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 13A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3939pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–30
–23
V
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = –24 V,
V GS = ±25 V,
V GS = 0 V
V DS = 0 V
–1
±100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –10 V, I D = –13 A
–1
–1.6
5
7.3
–3
9
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –11 A
V GS =–10 V, I D =–13 A, T J =125 ° C
10
9.5
13
13
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–50
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –13 A
44
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –15 V,
f = 1.0 MHz
V GS = 0 V,
3939
972
498
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –15 V,
V GS = –10 V,
V DS = –15 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –13 A,
19
10
110
65
71
12
34
20
176
104
100
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
15
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = –2.1 A
(Note 2)
–0.7
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in 2 pad of 2 oz
b) 105°C/W when
mounted on a .04 in 2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDS6679 Rev C1 (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6679 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6679_05 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30 Volt P-Channel PowerTrench㈢ MOSFET |
| FDS6679AZ | 功能描述:MOSFET -30V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6679AZ | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 13A, SOIC |
| FDS6679AZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench㈢ MOSFET |
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