参数资料
型号: FDS6690A
厂商: Fairchild Semiconductor
文件页数: 2/6页
文件大小: 0K
描述: MOSFET N-CH 30V 11A 8-SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 11A
开态Rds(最大)@ Id, Vgs @ 25° C: 12.5 毫欧 @ 11A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 16nC @ 5V
输入电容 (Ciss) @ Vds: 1205pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS6690ADKR
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
25
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = 24 V,
V GS = 0 V
1
μ A
V DS = 24 V, V GS = 0 V, T J =55 ° C
10
μ A
I GSS
Gate–Body Leakage
V GS = ± 20 V,
V DS = 0 V
± 100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 10 V, I D = 11 A
V GS = 4.5 V, I D = 10 A
1
1.9
–5
9.8
12.0
3
12.5
17.0
V
mV/ ° C
m ?
V GS = 10 V, I D = 11 A, T J =125 ° C
13.7
22.0
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 5 V,
V DS = 5 V
I D = 11 A
50
48
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1205
290
115
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
2.4
?
Switchin g Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15 V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 11 A,
9
5
28
9
12
3.4
19
10
44
19
16
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
4.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
t rr
Q rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0 V, I S = 2.1 A (Note 2)
I F = 11 A, d iF /d t = 100 A/μs
0.74
24
27
1.2
V
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
50°C/W when mounted
on a 1in 2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I AS = 8A,
V DD = 30V, V GS = 10V
FDS6690A Rev E1 (W)
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