参数资料
型号: FDS6692A
厂商: Fairchild Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 30V 9A 8-SOIC
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 11.5 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 29nC @ 10V
输入电容 (Ciss) @ Vds: 1610pF @ 15V
功率 - 最大: 1.47W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: FDS6692ADKR
Typical Characteristics T J = 25°C unless otherwise noted
24
21
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.8
2.6
PULSE DURATION = 80 μ s
18
2.4
3.0V
DUTY CYCLE = 0.5% MAX
15
12
9
6
WAVEFORMS
IN DESCENDING
ORDER:
10V
5.0V
4.0V
2.2
2
1.8
1.6
1.4
3.5V
4.0V
4.5V
3
0
0
0.1
0.2
0.3
3.5V
3.0V
0.4
0.5
1.2
1
0.8
0
6
12
5.0V
20
10V
24
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Drain
Current and Gate Voltage
0.02
1.4
I D = 9A
V GS =10V
0.018
I D =9A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0.016
1.2
0.014
T J =150 o C
1.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0.012
0.01
T J =25 o C
0.8
0.008
0.6
0.006
- 80
- 40
0 40 80 120
T J , JUNCTION TEMPERATURE ( o C)
160
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
24
21
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
100
I S = 9A
18
15
V DS = 6V
T J = 25 o C
10
1
T J = 150 o C
12
9
6
T J = 150 o C
T J = -55 o C
0.1
0.01
T J = 25 o C
T J = - 55 o C
3
0
0
1
2
3
4
0.001
0
0.2
0.4
0.6 0.8 1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE
Figure 6. Body Diode Forward Voltage Variation
With Source Current and Temperature
FDS6692A Rev. A 2
4
www.fairchildsemi.com
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