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参数资料
| 型号： | FDS6694 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 12A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Product Discontinuation 27/Feb/2012 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1293pF @ 15V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
22
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
10
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
1
2
–5
3
V
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS = 10 V,
V GS = 4.5 V,
I D = 12 A
I D = 10.5 A
9.1
11.1
11
13.5
m ?
V GS = 10 V, I D = 12 A, T J =125 ° C
12.2
15
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 5 V,
V DS = 5 V
I D = 12 A
50
50
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1293
342
136
0.84
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15 V,
V GS = 5 V
I D = –1 A,
R GEN = 6 ?
I D = 12 A,
9
6
28
10
13
4
18
12
45
20
19
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
4.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = 2.1 A
(Note 2)
0.74
1.2
V
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 12 A,
d iF /d t = 100 A/μs
29
30
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in 2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in 2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDS6694 Rev.E(W)
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相关代理商/技术参数 |
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| FDS6694 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6694_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6699S | 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6812 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6812A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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