- 您现在的位置：买卖IC网 > Datasheet目录427 > FDS6894AZ (Fairchild Semiconductor)MOSFET N-CH DUAL 20V 8A 8SOIC Datasheet资料下载
参数资料
| 型号： | FDS6894AZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 8A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 17 毫欧 @ 8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1455pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
October 2001
FDS6894AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench ? MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
? 8 A, 20 V. R DS(ON) = 17 m ? @ V GS = 4.5 V
R DS(ON) = 20 m ? @ V GS = 2.5 V
R DS(ON) = 30 m ? @ V GS = 1.8 V
? Low gate charge (14 nC typical)
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D D2
D D1
D D1
D D2
5
6
Q1
4
3
S1 G
SO-8
Pin 1 SO-8
G1
G2 S
S2 S
S
7
8
Q2
2
1
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
8
A
– Pulsed
32
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1.0
0.9
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS6894AZ
Device
FDS6894AZ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDS6894AZ Rev C (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6898A_NF40 | MOSFET N-CH DUAL PWM OPT 8-SOIC |
| FDS6898AZ_F085 | MOSFET N-CH 20V DUAL 8-SOIC |
| FDS6898AZ | MOSFET N-CH DUAL 20V 9.4A 8SOIC |
| FDS6900AS | MOSFET N-CH DUAL 30V 8SOIC |
| FDS6910 | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6898A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6898A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL N SMD SO-8 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, DUAL, N, SMD, SO-8 |
| FDS6898A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6898A_NF40 | 功能描述:MOSFET 20V 9.4A DUAL NCH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6898A-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6898A Series 20 V 14 mOhm Dual N-Channel PowerTrench Mosfet - SOIC-8 |
发布紧急采购，3分钟左右您将得到回复。