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| 型号： | FDS6890A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 7.5A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 7.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2130pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS6890ADKR |
Electrical Characteristics
T A = 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
20
14
1
100
V
mV/ ° C
μ A
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -8 V, V DS = 0 V
-100
nA
Reverse
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 4.5 V, I D =7.5 A
V GS = 4.5 V, I D =7.5 A, T J =125 ° C
0.5
0.8
-3.5
0.013
0.021
1.5
0.018
0.034
V
mV/ ° C
?
V GS = 2.5 V, I D =6.5 A
0.016
0.022
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 7.5 A
20
35
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
2130
545
270
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DS = 10 V, I D = 7.5 A,
V GS = 4.5 V,
13
26
65
23
23
3.2
4.4
24
42
90
37
32
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = 1.3 A
(Note 2)
0.65
1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 78 ° C/W when
mounted on a 0.5 in 2
pad of 2 oz. copper.
b) 125 ° C/W when
mounted on a 0.02 in 2
pad of 2 oz. copper.
c) 135 ° C/W when
mounted on a minimum pad.
Scale 1 : 1 on letter size paper
FDS6890A Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6892A | MOSFET N-CH DUAL 20V 7.5A 8SOIC |
| FDS6894AZ | MOSFET N-CH DUAL 20V 8A 8SOIC |
| FDS6898A_NF40 | MOSFET N-CH DUAL PWM OPT 8-SOIC |
| FDS6898AZ_F085 | MOSFET N-CH 20V DUAL 8-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6890A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6892 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6892AZ | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6894 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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