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参数资料
| 型号： | FDS6984SQ1 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 笔记本电源双N沟道的PowerTrench式SyncFET⑩ |
| 文件页数： | 2/9页 |
| 文件大小： | 552K |
| 代理商： | FDS6984SQ1 |
FDS6680S Rev C (W)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V
I
GSSR
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
Q2
Q1
Q2
Q1
All
All
30
30
V
500
1
100
-100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 uA, Referenced to 25
°
C
Q2
Q1
Q2
1
1
3
3
V
-6
V
GS(th)
===
T
J
Gate Threshold Voltage
Temperature Coefficient
Q1
-4
mV/
°
C
V
GS
= 10 V, I
D
= 8.5 A
V
GS
= 10 V, I
D
= 8.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 4.6 A
V
GS
= 10 V, V
DS
= 5 V
Q2
16
24
23
35
53
48
19
32
28
40
60
55
R
DS(on)
Static Drain-Source
On-Resistance
Q1
m
I
D(on)
On-State Drain Current
Q2
Q1
Q2
Q1
30
20
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 8.5 A
V
DS
= 5 V, I
D
= 5.5 A
26
40
S
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
1233
462
344
113
106
40
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
8
10
5
14
25
21
11
7
11
8.5
5
2.4
4
3.1
16
18
10
25
40
34
20
14
16
12
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
Q2
V
DS
= 15 V, I
D
= 8.5 A, V
GS
=5V
Q1
V
DS
= 15 V, I
D
= 5.5 A, V
GS
= 5 V
nC
F
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| FDS6990S | Dual 30V N-Channel PowerTrench SyncFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6986 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6986AS | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986AS_NBBD005 | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
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