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参数资料
| 型号： | FDS6984SQ1 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 笔记本电源双N沟道的PowerTrench式SyncFET⑩ |
| 文件页数： | 3/9页 |
| 文件大小： | 552K |
| 代理商： | FDS6984SQ1 |
FDS6680S Rev C (W)
Electrical Characteristics
(continued)
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
3.0
1.3
A
t
rr
Q
rr
V
SD
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
17
12.5
0.5
0.74
ns
I
F
= 10A,
d
iF
/d
t
= 300 A/μs
(Note 3)
nC
V
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
(Note 2)
Q2
Q1
0.7
1.2
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
See “SyncFET Schottky body diode characteristics” below.
3.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6986AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6986S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6990S | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990 | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990A | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6986 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6986AS | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986AS_NBBD005 | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
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