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参数资料
| 型号： | FDS6984SQ1 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 笔记本电源双N沟道的PowerTrench式SyncFET⑩ |
| 文件页数： | 8/9页 |
| 文件大小： | 552K |
| 代理商： | FDS6984SQ1 |
FDS6680S Rev C (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 22
shows the reverse recovery characteristic of the
FDS6984S.
Figure 22. FDS6984S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
125
o
C
25
o
C
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
3
F
10nS/DIV
3
0V
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6986AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6986S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6990S | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990 | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990A | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6986 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6986AS | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986AS_NBBD005 | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
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