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参数资料
| 型号： | FDS6984SQ1 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 笔记本电源双N沟道的PowerTrench式SyncFET⑩ |
| 文件页数： | 6/9页 |
| 文件大小： | 552K |
| 代理商： | FDS6984SQ1 |
FDS6680S Rev C (W)
Typical Characteristics Q1
0
10
20
30
40
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4.0V
3.0
3.5V
4.5
V
GS
= 10V
5.0
6.0
0.5
1
1.5
2
2.5
3
0
10
20
30
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
4.0V
3.5V
10V
4.5V
5.0V
6.0V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 4.6A
V
GS
= 10V
0
0.05
0.1
0.15
0.2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 2.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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PDF描述 |
|---|---|
| FDS6986AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6986S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6990S | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990 | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990A | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6986 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6986AS | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986AS_NBBD005 | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
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