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参数资料
| 型号： | FDS6993 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual P-Channel PowerTrench MOSFET |
| 中文描述： | 4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 159K |
| 代理商： | FDS6993 |
FDS6993 Rev C (W)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
GS
= 0 V, I
D
= –250
μ
A
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= –24 V, V
GS
= 0 V
V
DS
= –10 V, V
GS
= 0 V
V
GS
= ±25 V, V
DS
= 0 V
V
GS
= ±8 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–30
–12
V
Breakdown Voltage
–21
–0.9
mV/
°
C
μ
A
–1
–1
±100
±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
V
DS
= V
GS
, I
D
= –250 μA
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= –10 V, I
D
= –4.3 A
V
GS
= –10 V, I
D
= –4.3 A, T
J
= 125
°
C
V
GS
= –4.5 V, I
D
= –3.4 A
Q1
Q2
Q1
Q2
Q1
–1
–0.4
–1.8
–0.5
4
3
48
64
74
11
14
14
19
–3
–1.5
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
55
80
85
V
GS
= –4.5 V, I
D
= –6.8 A
V
GS
= –4.5 V, I
D
= –6.8 A, T
J
= 125
°
C
V
GS
= –2.5 V, I
D
= –5.9 A
V
GS
= –1.8 V, I
D
= –5.0
V
GS
= –10 V, V
DS
= –5 V
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –10 V, I
= –7 A
V
DS
= –5 V, I
D
= –5 A
Q2
17
24
24
30
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
–20
–20
A
S
g
FS
Forward Transconductance
9
34
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
530
2980
140
1230
70
790
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= –15 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= –6 V, V
GS
= 0 V, f = 1.0 MHz
F
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|---|---|
| FDS6994S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS7060N7 | 30V N-Channel PowerTrench MOSFET |
| FDS7064A | 30V N-Channel PowerTrench MOSFET |
| FDS7064N | 30V N-Channel PowerTrench MOSFET |
| FDS7064SN3 | 30V N-Channel PowerTrench SyncFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6993_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| FDS6994S | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6994S_Q | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7060N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7064A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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