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参数资料
| 型号： | FDS6993 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual P-Channel PowerTrench MOSFET |
| 中文描述： | 4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 159K |
| 代理商： | FDS6993 |
FDS6993 Rev C (W)
Electrical Characteristics
(continued)
Symbol
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
10
19
14
20
14
134
9
121
5.5
32
1.8
4.0
2.2
8.0
19
34
26
35
24
215
18
193
7.7
45
ns
ns
ns
ns
nC
nC
nC
Q1
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10V, R
GEN
= 6
Q2
V
DD
= –6 V, I
D
= –1 A,
V
GS
= –4.5V, R
GEN
= 6
Q1
V
DS
= –15 V, I
D
= –4.3 A,
V
= –5 V
Q2
V
DS
= –6 V, I
D
= –6.8 A,
V
GS
= –5 V
Q1
Q2
Q1
Q2
–1.3
–1.3
–1.2
–1.2
A
V
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.3 A
V
GS
= 0 V, I
S
= –1.3 A
(Note 2)
(Note 2)
–0.8
–0.6
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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PDF描述 |
|---|---|
| FDS6994S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS7060N7 | 30V N-Channel PowerTrench MOSFET |
| FDS7064A | 30V N-Channel PowerTrench MOSFET |
| FDS7064N | 30V N-Channel PowerTrench MOSFET |
| FDS7064SN3 | 30V N-Channel PowerTrench SyncFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6993_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| FDS6994S | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6994S_Q | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7060N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7064A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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