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参数资料
| 型号： | FDS6993 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual P-Channel PowerTrench MOSFET |
| 中文描述： | 4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 4/8页 |
| 文件大小： | 159K |
| 代理商： | FDS6993 |
FDS6993 Rev C (W)
Typical Characteristics: Q1
0
4
8
12
16
20
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-3.0V
-3.5V
-4.0V
-4.5V
V
-5.0V
V
-6.0V
V
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-4.0V
-4.5V
-6.0V
-7.0V
-8.0V
-10V
-5.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
R
D
,
I
D
= -4.3A
V
GS
= -10V
0
0.05
0.1
0.15
0.2
2.5
5
7.5
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -2.15A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
2
2.5
3
3.5
4
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
=0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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PDF描述 |
|---|---|
| FDS6994S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS7060N7 | 30V N-Channel PowerTrench MOSFET |
| FDS7064A | 30V N-Channel PowerTrench MOSFET |
| FDS7064N | 30V N-Channel PowerTrench MOSFET |
| FDS7064SN3 | 30V N-Channel PowerTrench SyncFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6993_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| FDS6994S | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6994S_Q | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7060N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7064A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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