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参数资料
| 型号： | FDS7079ZN3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | TV 29C 29#16 SKT RECP |
| 中文描述： | 16 A, 30 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 183K |
| 代理商： | FDS7079ZN3 |
February 2004
FDS7079ZN3
30 Volt P-Channel PowerTrench
MOSFET
2004 Fairchild Semiconductor Corporation
FDS7079ZN3 Rev C1 (W)
General Description
Advanced P Channel MOSFET combined with
Advanced SO8 FLMP package providing a device with
extremely low thermal impedance and improved
electrical performance.
Applications for this device include multi-cell battery
protection and charging, including protection and load
switching in notebook computer and notebook battery
packs.
Features
–16 A, –30 V. R
DS(ON)
= 7.5 m
@ V
GS
= –10 V
R
DS(ON)
= 11.5 m
@ V
GS
= – 4.5 V
ESD protection diode (note 3)
ESD rating: 4kV
High performance trench technology for extremely
low R
DS(ON)
FLMP SO-8 package for enhanced thermal
performance in industry-standard package size
S
S
S
SO-
D
NC
NC
NC
NC
D
D
G
S
S
S
G
D
Pin 1
FLMP SO-8
4
5
3
6
2
7
1
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–30
±25
–16
–60
3.13
1.5
–55 to +150
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7079ZN3
FDS7079ZN3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
Bottom Side Drain Contact
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7082N3 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7088N3 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7088N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS7088N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7088SN3 | 功能描述:MOSFET 30V N-Chnl PwrTernch SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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