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参数资料
| 型号： | FDS7088N7 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 23 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 5/7页 |
| 文件大小： | 190K |
| 代理商： | FDS7088N7 |
FDS7088SN3 Rev B (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 12 shows the reverse
recovery characteristic of the FDS7088SN3.
Figure 12. FDS7088SN3 SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent
size MOSFET produced without SyncFET (FDS7088N3).
Figure 13. Non-SyncFET (FDS7088N3) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 100
o
C
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature
F
0
12.5 nS/div
0
12.5 nS/div
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PDF描述 |
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| FDS7088N3 | 30V N-Channel PowerTrench MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7088SN3 | 功能描述:MOSFET 30V N-Chnl PwrTernch SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7088SN3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS7096N | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDS7096N3 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7098N3 | 功能描述:MOSFET 30V NCH SINGLE SO8 FMP PwR TRNCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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