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| 型号： | FDS8878 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 10.2A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 10.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 897pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS8878DKR |
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
Drain Current
Continuous (T A = 25 C, V GS = 4.5V, R θ JA = 50 C/W)
I D
E AS
P D
Continuous (T A = 25 o C, V GS = 10V, R θ JA = 50 o C/W)
o o
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
10.2
9.3
80
57
2.5
20
A
A
A
mJ
W
mW/ o C
T J , T STG
Operating and Storage Temperature
-55 to 150
o
C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
25
50
o C/W
o C/W
R θ JA
Thermal Resistance, Junction to Ambient (Note 2b)
125
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8878
Device
FDS8878
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ±20V
T J = 150 o C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
1.2
-
2.5
V
I D = 10.2A, V GS = 10V
-
11.0
14.0
r DS(on)
Drain to Source On Resistance
I D = 9.3A, V GS = 4.5V
I D = 10.2A, V GS = 10V,
T J = 150 o C
-
-
13.8
17.5
17.0
22.7
m ?
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
-
-
-
0.7
897
190
111
2.9
-
-
-
5.0
pF
pF
pF
?
Q g(TOT)
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 10V
V GS = 0V to 5V
V GS = 0V to 1V
V DD = 15V
I D = 10.2A
I g = 1.0mA
-
-
-
-
-
-
17
9
0.9
2.5
1.7
3.3
26
14
1.4
-
-
-
nC
nC
nC
nC
nC
nC
?2008 Fairchild Semiconductor Corporation
FDS8878 Rev. C
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDS8878_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8878_F123 | 功能描述:MOSFET 30V N-CHAN 10.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8878_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8880 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8880 | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process |
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