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参数资料
| 型号： | FDS8958A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SO-8, 8 PIN |
| 文件页数： | 2/11页 |
| 文件大小： | 285K |
| 代理商： | FDS8958A |
FDS8958A Rev D(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward
I
GSSR
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
V
GS
= 0 V, I
D
= 250
μ
A
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= -250 μA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
All
All
30
-30
V
Breakdown Voltage
25
-22
mV/
°
C
1
-1
100
-100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= -250 μA
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= -250 μA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= -10 V, I
D
= -5 A
V
GS
= -10 V, I
D
= -5 A, T
J
= 125
°
C
V
GS
= -4.5 V, I
D
= -4 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 7 A
V
DS
= -5 V, I
D
=-5 A
Q1
Q2
Q1
Q2
Q1
1
-1
1.6
-1.7
-4.3
4
21
32
27
41
58
58
3
-3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
28
42
40
52
78
80
m
Q2
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
20
-20
A
g
FS
Forward Transconductance
19
11
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
789
690
173
306
66
77
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= -10 V, V
GS
= 0 V, f = 1.0 MHz
pF
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8958A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8 |
| FDS8958A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N and P-Channel PowerTrench MOSFET |
| FDS8958A_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrenchO MOSFET |
| FDS8958A_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench MOSFET |
| FDS8958A_F085 | 功能描述:MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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