参数资料
型号: FDS8958A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述: 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SO-8, 8 PIN
文件页数: 7/11页
文件大小: 285K
代理商: FDS8958A
FDS8958A Rev D(W)
Typical Characteristics Q2
0
2
4
6
8
10
0
5
10
15
Q
g
, GATE CHARGE (nC)
I
D
= -5.3A
V
DS
= -5V
-10V
-15V
0
200
400
600
800
1000
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
t
1
, TIME (sec)
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 135
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
相关PDF资料
PDF描述
FDS8958 Dual N & P-Channel PowerTrench MOSFET
FDS8960C Dual N & P-Channel PowerTrench MOSFET
FDS8962C Dual N & P-Channel Power Trench
FDS8978 30V N-Channel PowerTrench MOSFET
FDS9400A 30V P-Channel PowerTrench MOSFET
相关代理商/技术参数
参数描述
FDS8958A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8
FDS8958A_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N and P-Channel PowerTrench MOSFET
FDS8958A_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrenchO MOSFET
FDS8958A_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench MOSFET
FDS8958A_F085 功能描述:MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube