- 您现在的位置：买卖IC网 > PDF目录375785 > FDS8958A (FAIRCHILD SEMICONDUCTOR CORP) Dual N & P-Channel Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | FDS8958A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SO-8, 8 PIN |
| 文件页数： | 3/11页 |
| 文件大小： | 285K |
| 代理商： | FDS8958A |
FDS8958A Rev D(W)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
2.2
6.7
7.5
9.7
11.8
19.8
3.7
12.3
16
14
2.5
2.4
2.6
4.8
4.4
13.4
15
19.4
21.3
35.6
7.4
22.2
26
23
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
Q1
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -10V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
Q1
V
DS
= 15 V, I
D
= 7 A, V
GS
= 10 V
Q2
V
DS
= -15 V, I
D
= -5 A,V
GS
= -10 V
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
1.3
-1.3
1.2
-1.2
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
(Note 2)
0.74
-0.76
V
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8958 | Dual N & P-Channel PowerTrench MOSFET |
| FDS8960C | Dual N & P-Channel PowerTrench MOSFET |
| FDS8962C | Dual N & P-Channel Power Trench |
| FDS8978 | 30V N-Channel PowerTrench MOSFET |
| FDS9400A | 30V P-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8958A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8 |
| FDS8958A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N and P-Channel PowerTrench MOSFET |
| FDS8958A_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrenchO MOSFET |
| FDS8958A_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench MOSFET |
| FDS8958A_F085 | 功能描述:MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。