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参数资料
| 型号： | FDS8962C |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel Power Trench |
| 中文描述： | 7 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 185K |
| 代理商： | FDS8962C |
February 2005
2005 Fairchild Semiconductor Corporation
FDS8962C Rev A (W)
FDS8962C
Dual
N & P-Channel PowerTrench
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1
:
N-Channel
7.0A, 30V
R
DS(on)
= 0.030
@ V
GS
= 10V
R
DS(on)
= 0.044
@ V
GS
= 4.5V
Q2
:
P-Channel
-5A, -30V
R
DS(on)
= 0.052
@ V
GS
= -10V
R
DS(on)
= 0.080
@ V
GS
= -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
S
D
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
30
±
20
7
20
30
±
20
-5
-20
V
V
A
W
(Note 1a)
- Pulsed
2
1.6
1
0.9
(Note 1a)
(Note 1b)
(Note 1c)
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS8962C
FDS8962C
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Reel Size
13”
Tape width
12mm
Quantity
2500 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8978 | 30V N-Channel PowerTrench MOSFET |
| FDS9400A | 30V P-Channel PowerTrench MOSFET |
| FDS9400 | 30V P-Channel PowerTrench MOSFET |
| FDS9412 | Single N-Channel Enhancement Mode Field Effect Transistor |
| FDS9431 | P-Channel 2.5V Specified MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8978 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8978_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8978_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET |
| FDS8978_F123 | 功能描述:MOSFET 30V N-CHAN 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8984 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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