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参数资料
| 型号： | FDS8962C |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel Power Trench |
| 中文描述： | 7 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 7/8页 |
| 文件大小： | 185K |
| 代理商： | FDS8962C |
FDS8962C Rev A (W)
Typical Characteristics: Q2 (P-Channel)
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -5A
V
DS
= -5V
-10V
-15V
0
100
200
300
400
500
600
700
800
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
10s
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 125
T
A
= 25
/W
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 135
/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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