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参数资料
| 型号： | FDS8962C |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel Power Trench |
| 中文描述： | 7 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 4/8页 |
| 文件大小： | 185K |
| 代理商： | FDS8962C |
FDS8962C Rev A (W)
Typical Characteristics: Q1 (N-Channel)
0
4
8
12
16
20
0
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
I
D
,
3.0V
4.5V
4.0V
V
GS
= 10.0V
3.5V
6.0V
0.6
1
1.4
1.8
2.2
0
4
12
16
20
I
D
, D8
R
D
,
D
V
GS
= 3.5V
6.0V
5.0
4.5V
4.0
10.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
R
D
,
I
D
= 7A
V
GS
= 10.0V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 3.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
-55
o
C
V
DS
= 5V
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.6
0.8
1
1.2
V
SD
, BOD0.4
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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| FDS8984 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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