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参数资料
| 型号： | FDS8960C |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel PowerTrench MOSFET |
| 中文描述： | 7 A, 35 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 175K |
| 代理商： | FDS8960C |
FDS8960C Rev C(W)
www.fairchildsemi.com
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max
Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
12
5
16
23
20
3
5
5.5
5.7
1.8
1.8
1.8
2
16
22
10
29
37
32
6
10
7.7
8
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
Q1
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DD
= –15 V, I
D
= -1 A,
V
GS
= –10V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
Q1
V
DS
= 15 V, I
D
= 7 A, V
GS
= 5 V
Q2
V
DS
= –15 V, I
D
= –5 A,V
GS
= –5 V
nC
Drain–Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.3
–1.3
1.2
–1.2
A
V
SD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= –1.3 A
Q1
I
= 7 A, d
iF
/d
t
= 100 A/μs
Q2
I
F
= -5 A, d
iF
/d
t
= 100 A/μs
(Note 2)
(Note 2)
0.8
–0.8
20
17
10
5
V
t
rr
nS
Q
rr
nC
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
N
ò
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相关代理商/技术参数 |
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| FDS8960C_0511 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench㈢ MOSFET |
| FDS8962C | 功能描述:MOSFET SO8 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8978 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8978_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8978_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET |
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