参数资料
型号: FDS8960C
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Dual N & P-Channel PowerTrench MOSFET
中文描述: 7 A, 35 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SO-8
文件页数: 4/8页
文件大小: 175K
代理商: FDS8960C
FDS8960C Rev C(W)
www.fairchildsemi.com
Typical Characteristics: Q1 (N-Channel)
0
4
8
12
16
20
0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
1.5
2
I
D
,
V
GS
= 10V
6.0V
3.5V
4.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
4
12
16
20
I
D
, D8
R
D
,
D
V
GS
= 3.5V
4.5V
6.0V
10V
4.0V
5.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 7A
V
GS
= 10V
0.015
0.025
0.035
0.045
0.055
0.065
2
3
4
6
7
8
9
10
V
GS
, GATE5
R
D
,
I
D
= 3.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
1.5
2.5
3.5
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
N
ò
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