参数资料
型号: FDSS2407
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel Dual MOSFET
中文描述: 3.3 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 3/13页
文件大小: 680K
代理商: FDSS2407
FDSS2407 Rev. A
www.fairchildsemi.com
F
3
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Drain Feedback Characteristics
Gate Drive Disable Characteristics
Gate Drive Disable Input Voltage, Gate
Enabled
Gate Drive Disable Input Voltage, Gate
Disabled
Notes:
1.
Starting T
J
= 25°C, L = 42mH, I
AS
= 2.6A, V
DD
= 62V, V
GS
= 10V.
2.
55
o
C/W measured using FR-4 board with 0.50 in
2
(323 mm
2
) copper pad at 1 second.
3.
180
C/W measured using FR-4 board with 0.027 in
(17.4 mm
) copper pad at 1000 seconds.
4.
200
o
C/W measured using FR-4 board with 0.006 in
2
(3.87 mm
2
) copper pad at 1000 seconds.
V
DD
= 30V, I
D
= 3.3A
V
GS
= 10V, R
GS
= 47
-
-
-
-
-
-
-
2700
-
-
-
-
18500
ns
ns
ns
ns
ns
ns
630
1200
8700
3500
-
V
SD
Source to Drain Diode Voltage
I
SD
= 3.3A
I
SD
= 1.7A
I
SD
= 3.3A, dI
SD
/dt = 100A/
μ
s
I
SD
= 3.3A, dISD/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
45
60
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
V
FBK(Low)
Feedback to Source Voltage
V
FBK(High)
Feedback to Source Voltage
V
DS
= 35V, R
FBK-SOURCE
=51K
V
DS
= 62V, R
FBK-SOURCE
=51K
-
1
1.5
-
V
V
3.5
4.4
V
DIS(High)
V
GS
= 5V, I
D
= 3.0A
,
T
J
=25
o
C
3
-
-
V
V
DIS(Low)
V
GS
= V
DS
= 10V, I
D
250
μ
A,
T
J
=150
o
C
-
-
0.4
V
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
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