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参数资料
| 型号： | FDSS2407 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Dual MOSFET |
| 中文描述： | 3.3 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 6/13页 |
| 文件大小： | 680K |
| 代理商： | FDSS2407 |
FDSS2407 Rev. A
www.fairchildsemi.com
F
6
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Feedback Voltage vs Drain to Source
Voltage
Figure 14. Capacitance vs Drain to Source
Voltage
Figure 15. Drain to Source On Resistance vs
Gate
Disable Voltage
Figure 16. Gate to Source Voltage vs Gate
Disable Voltage
Typical Characteristics
(Continued) T
A
= 25°C unless otherwise noted
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 5mA
B
0
1
2
3
4
5
6
20
30
40
50
60
70
F
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
FBK voltage measured across
a 51K
load resistor.
10
100
1000
1
10
0.1
20
C
V
GS
= 0V, f = 75kHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
100
200
300
400
500
1
2
3
4
5
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
DIS
, GATE DISABLE VOLTAGE (V)
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 3A
0
2
4
6
8
10
0
1
2
3
4
5
V
DIS
, GATE DISABLE VOLTAGE (V)
I
D
= 250
μ
A
V
GS
= V
DS
V
G
,
T
J
= 150
o
C
T
J
= -55
o
C
T
J
= 25
o
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDSS2407_SB82086 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDSS2407S_B82086 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDSSM0.0625 | 制造商:Alpha 3 Manufacturing 功能描述: |
| FDSSM0.25 | 制造商:Alpha 3 Manufacturing 功能描述: |
| FDST/FDT-08-POLE/PED-HB | 制造商:3M Electronic Products Division 功能描述: |
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