参数资料
型号: FDT434P
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: P-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 6 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: SOT-223, 4 PIN
文件页数: 4/8页
文件大小: 244K
代理商: FDT434P
FDT434P Rev. C1 (W)
Typical Characteristics
0
3
6
9
12
15
0
1
2
3
4
5
Q , GATE CHARGE (nC)
g
V
G
G
V = 5V
-10V
I = -6.0A
D
-15V
0.1
0.3
-V ,DRAIN TO SOURCE VOLTAGE (V)
1
3
10
20
50
100
200
400
1000
2500
C
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 42
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
DC
1s
10s
100ms
10ms
100
μ
s
0
0.0001
40
80
120
160
200
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 110
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 110 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
Single Pulse
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
F
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相关代理商/技术参数
参数描述
FDT434P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDT434P_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench??? MOSFET
FDT434P_Q 功能描述:MOSFET SOT-223 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDT439N 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDT439N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET