参数资料
型号: FDT86246
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH 150V 2A SOT-223
标准包装: 4,000
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 236 毫欧 @ 2A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 4nC @ 10V
输入电容 (Ciss) @ Vds: 215pF @ 75V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 带卷 (TR)
Typical Characteristics T J = 25 °C unless otherwise noted
8
V GS = 10 V
3.0
6
V GS = 7 V
V GS = 6 V
2.5
V GS = 5 V
V GS = 5.5 V
4
V GS = 5.5 V
2.0
1.5
V GS = 6 V
2
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 5 V
1.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 7 V
V GS = 10 V
0
0
1
2
3
4
5
0.5
0
2
4
6
8
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
2.0
I D = 2 A
V GS = 10 V
800
I D = 2 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
600
1.6
1.2
400
T J = 125 o C
0.8
200
T J = 25 o C
0.4
-75
-50
-25 0 25 50 75 100 125 150
0
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On-Resistance
vs Junction Temperature
8
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
6
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
V GS = 0 V
1
4
V DS = 5 V
T J = 150 o C
T J = 25 o C
0.1
T J = 150 o C
T J = 25 o C
2
T J = -55 o C
0.01
T J = -55 o C
0
2
3
4
5
6
7
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
3
www.fairchildsemi.com
相关PDF资料
PDF描述
FDT86256 MOSFET N-CH 150V 1.2A SOT-223-4
FDU2572 MOSFET N-CH 150V 29A I-PAK
FDU3706 MOSFET N-CH 20V 14.7A I-PAK
FDU6612A MOSFET N-CH 30V 9.5A I-PAK
FDU6688 MOSFET N-CH 30V 84A I-PAK
相关代理商/技术参数
参数描述
FDT86256 功能描述:MOSFET 150V NCh MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDT-B3RX-QFN16 制造商:FuDaTong 功能描述:
FDTC-08M-COUPLINGTRAY- 制造商:3M Electronic Products Division 功能描述:FDTC-08M-COUPLINGTRAY-4SCUPC F 80611380801
FDTC-08M-E-00N-01C-A-08-EP 制造商:3M Electronic Products Division 功能描述:
FDTC-08M-E-00N-02C-A-05-EP 制造商:3M Electronic Products Division 功能描述: