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参数资料
| 型号： | FDU8878 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 40A I-PAK |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 75 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 15 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 880pF @ 15V |
| 功率 - 最大： | 40W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
Absolute Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V) (Note 1)
40
A
Continuous (T C = 25 C, V GS = 4.5V) (Note 1)
C
I D
E AS
P D
T J , T STG
o
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 52 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
36
11
Figure 4
25
40
0.27
-55 to 175
A
A
A
mJ
W
W/ o C
o
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case TO-252, TO-251
3.75
o C/W
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
R θJA
R θ JA
Thermal Resistance Junction to Ambient TO-252, TO-251
2
100
52
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD8878
FDU8878
Device
FDD8878
FDU8878
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
F
F
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
1.2
-
2.5
V
I D = 35A, V GS = 10V
-
0.011
0.015
r DS(ON)
Drain to Source On Resistance
I D = 35A, V GS = 4.5V
I D = 35A, V GS = 10V,
T J = 175 o C
-
-
0.014
0.018
0.0185
0.024
?
?200 8 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A 4
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDU8878_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm |
| FDU8880 | 功能描述:MOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDU8882 | 功能描述:MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU8882_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
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