- 您现在的位置：买卖IC网 > Datasheet目录428 > FDV302P_D87Z (Fairchild Semiconductor)MOSFET P-CH 25V 0.12A SOT-23 Datasheet资料下载
参数资料
| 型号： | FDV302P_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 25V 0.12A SOT-23 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 120mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.31nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 11pF @ 10V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
October 1997
FDV302P
Digital FET, P-Channel
General Description
This P-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one P-channel FET can
replace several digital transistors with different bias resistors
such as the DTCx and DCDx series.
Features
-25 V, -0.12 A continuous, -0.5 A Peak.
R DS(ON) = 13 ? @ V GS = -2.7 V
R DS(ON) = 10 ? @ V GS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V GS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
Replace many PNP digital transistors (DTCx and DCDx)
with one DMOS FET.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
Mark:302
D
G
S
Absolute Maximum Ratings
T A = 25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
FDV302P
-25
-8
Units
V
V
I D
Drain Current
- Continuous
-0.12
A
- Pulsed
-0.5
P D
T J ,T STG
ESD
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
0.35
-55 to 150
6.0
W
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistance, Junction-to-Ambient
357
°C/W
? 1997 Fairchild Semiconductor Corporation
FDV302P REV. F
相关PDF资料 |
PDF描述 |
|---|---|
| FDV303N_NB9U008 | MOSFET N-CH 25V 680MA SOT-23 |
| FDV304P_D87Z | MOSFET P-CH 25V 0.46A SOT-23 |
| FDV305N | MOSFET N-CH 20V 0.9A SOT-23 |
| FDY1002PZ | MOSFET P-CH DUAL 20V SC89-6 |
| FDY100PZ | MOSFET P-CH 20V 350MA SC-89 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV303 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Digital FET, N-Channel |
| FDV303N | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23 |
| FDV303N_NB9U008 | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303N_Q | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。