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参数资料
| 型号： | FDU8882 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 55A I-PAK |
| 标准包装： | 1,800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 33nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1260pF @ 15V |
| 功率 - 最大： | 55W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
Typical Characteristics T C = 25 ° C unless otherwise noted
1000
500
If R = 0
100
10 μ s
100
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
OPERATION IN THIS
AREA MAY BE
100 μ s
10
STARTING T J = 25 o C
1
0.1
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1ms
10ms
DC
1
STARTING T J = 150 o C
1
10
60
0.001
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
80
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
60
V GS = 10 V
V GS = 4.5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 3.5 V
40
T J = 25 o C
40
T J = -55 C
20
0
T J = 175 o C
o
20
0
V GS = 3V
T C = 25 o C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.5
1.0
1.5
2.0
2.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
20
16
I D = 35A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
12
I D = 1A
1.0
0.8
V GS = 10V, I D = 35A
8
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
0.6
-80
-40
0 40 80 120
T J , JUNCTION TEMPERATURE ( o C)
160
200
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8882/FDU8882 Rev. C
5
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDU8882_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDU8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU8896_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDU8896_Q | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDUE0630-H-R24M=P3 | 制造商:TOKO Inc 功能描述: |
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