参数资料
型号: FDU8896
厂商: Fairchild Semiconductor
文件页数: 3/11页
文件大小: 0K
描述: MOSFET N-CH 30V 94A I-PAK
标准包装: 1,800
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 94A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.7 毫欧 @ 35A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 60nC @ 10V
输入电容 (Ciss) @ Vds: 2525pF @ 15V
功率 - 最大: 80W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
Typical Characteristics T C = 25 ° C unless otherwise noted
1.2
1.0
100
CURRENT LIMITED
BY PACKAGE
75
0.8
0.6
50
0.4
25
0.2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T C , CASE TEMPERATURE ( o C)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
T C , CASE TEMPERATURE ( o C)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
1
0.5
0.2
0.1
0.05
0.02
0.01
P DM
0.1
t 1
t 2
NOTES:
0.01
SINGLE PULSE
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z θ JC x R θ JC + T C
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
V GS = 4.5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
175 - T C
150
100
30
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
?200 8 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C 2
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