参数资料
型号: FDU8896
厂商: Fairchild Semiconductor
文件页数: 5/11页
文件大小: 0K
描述: MOSFET N-CH 30V 94A I-PAK
标准包装: 1,800
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 94A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.7 毫欧 @ 35A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 60nC @ 10V
输入电容 (Ciss) @ Vds: 2525pF @ 15V
功率 - 最大: 80W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
Typical Characteristics T C = 25 ° C unless otherwise noted
1.2
V GS = V DS , I D = 250 μ A
1.2
I D = 250 μ A
1.0
1.1
0.8
1.0
0.6
0.4
0.9
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
5000
C ISS = C GS + C GD
T J , JUNCTION TEMPERATURE ( o C)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V DD = 15V
8
1000
C OSS ? C DS + C GD
6
C RSS = C GD
4
WAVEFORMS IN
2
DESCENDING ORDER:
I D = 35A
100
V GS = 0V, f = 1MHz
0
I D = 5A
0.1
1
10
30
0
10
20 30
40
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
?200 8 Fairchild Semiconductor Corporation
Q g , GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
FDD8896 / FDU8896 Rev. C 2
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