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| 型号： | FDV301N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 220MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 400mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.06V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 9.5pF @ 10V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDV301NDKR |
June 2009
FDV301N
Digital FET , N-Channel
General Description
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.
Features
25 V, 0.22 A continuous, 0.5 A Peak.
R DS(ON) = 5 ? @ V GS = 2.7 V
R DS(ON) = 4 ? @ V GS = 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V GS(th) < 1. 06 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
Mark:301
INVERTER APPLICATION
Vcc
D
D
OUT
IN
G
S
Absolute Maximum Ratings
G
T A = 25 o C unless other wise noted
S
GND
Symbol
V DSS , V CC
V GSS , V I
Parameter
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage, V IN
FDV301N
25
8
Units
V
V
I D , I O
Drain/Output Current
- Continuous
0.22
A
0.5
P D
T J ,T STG
ESD
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
0.35
-55 to 150
6.0
W
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistance, Junction-to-Ambient
357
°C/W
?2009 Fairchild Semiconductor Corporation
FDV301N Rev.F 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV301N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23 |
| FDV301N | 制造商:Fairchild Semiconductor Corporation 功能描述:25V N-CH. FET 4 O SOT23 |
| FDV301N_D87Z | 功能描述:MOSFET 25V N-Ch FET 4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV301N_NB9V005 | 功能描述:MOSFET N-Ch Digital Automotive Spec RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV301N_NB9V008 | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:25 V, 0.22 A N-Chan Digital FET |
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