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| 型号： | FDV301N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 220MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 400mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.06V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 9.5pF @ 10V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDV301NDKR |
Inverter Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
I O (off)
V I (off)
Parameter
Zero Input Voltage Output Current
Input Voltage
Conditions
V CC = 20 V, V I = 0 V
V CC = 5 V, I O = 10 μA
Min
Typ
Max
1
0.5
Units
μA
V
V I (on)
V O = 0.3 V, I O = 0.005 A
1
V
R O (on)
Output to Ground Resistance
V I = 2.7 V, I O = 0.2 A
4
5
?
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
? BV DSS / ? T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
V GS = 0 V, I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V DS = 20 V, V GS = 0 V
T J = 55°C
V GS = 8 V, V DS = 0 V
25
25
1
10
100
V
mV / o C
μA
μA
nA
ON CHARACTERISTICS
(Note)
? V GS(th) / ? T J
Gate Threshold Voltage Temp. Coefficient
I D = 250 μA, Referenced to 25 o C
-2.1
mV / o C
V GS(th)
R DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
V GS = 2.7 V, I D = 0.2 A
0. 70
0.85
3.8
1.06
5
V
?
V GS = 4.5 V, I D = 0.4 A
T J =125°C
6.3
3.1
9
4
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 2.7 V, V DS = 5 V
V DS = 5 V, I D = 0.4 A
0.2
0.2
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
9.5
6
1.3
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 6 V, I D = 0.5 A,
V GS = 4.5 V, R GEN = 50 ?
V DS = 5 V, I D = 0.2 A,
V GS = 4.5 V
3.2
6
3.5
3.5
0.49
0.22
0.07
8
15
8
8
0.7
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
0.29
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.29 A
(Note)
0.8
1.2
V
Note:
Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDV301N Rev.F 1
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