参数资料
型号: FDV301N
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH 25V 220MA SOT-23
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: SuperSOT-3, SOT-23
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 220mA
开态Rds(最大)@ Id, Vgs @ 25° C: 4 欧姆 @ 400mA,4.5V
Id 时的 Vgs(th)(最大): 1.06V @ 250µA
闸电荷(Qg) @ Vgs: 0.7nC @ 4.5V
输入电容 (Ciss) @ Vds: 9.5pF @ 10V
功率 - 最大: 350mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: FDV301NDKR
Typical Electrical Characteristics
0 .5
1 .4
V
GS
= 4.5V
4 .0
0 .4
0 .3
3 .5
3 .0
2 .7
2 .5
1 .2
V GS = 2 .0V
2 .5
1
2 .7
3 .0
0 .2
2 .0
3 .5
0 .1
0 .8
4 .0
4 .5
1 .5
0
0
0 .5
1
1 .5
2
2 .5
3
0 .6
0
0 .1
0 .2
0 .3
0 .4
0 .5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
1.8
Figure 1. On-Region Characteristics .
15
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage .
1.6
I D = 0.2A
V GS = 2.7 V
12
I D = 0.2A
1.4
9
25°C
125°C
1.2
6
1
3
0.8
0
0.6
2
2.5
3
3.5
4
-50
-25
0 25 50 75 100
T J , JUNCTION TEMPERATURE (°C)
125
150
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature .
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
0 .2
0 .1 5
V DS = 5.0V
T = -55°C
J
25°C
125°C
0.5
0.2
0.1
V GS = 0V
T J = 125°C
25°C
0 .1
0 .0 5
0
0.01
0.001
-55°C
0 .5
1
1 .5
2
2 .5
0.0001
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.2
0.4 0.6 0.8 1
V , BODY DIODE FORW A RD VOLTAGE (V)
SD
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.
FDV301N Rev.F 1
相关PDF资料
PDF描述
XPGWHT-P1-R250-00AF8 LED WARM WHITE XLAMP CLR SMD
552S2S72 CBL STR FMALE-R/A FMALE 2POS 6'
XPGWHT-P1-R250-00BE7 LED WARM WHITE XLAMP CLR SMD
465S144 CABLE R/A SGL-END FMALE 5POS 12'
MLCSWT-A1-0000-000WE7 LED HIGH BRIGHTNESS
相关代理商/技术参数
参数描述
FDV301N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23
FDV301N 制造商:Fairchild Semiconductor Corporation 功能描述:25V N-CH. FET 4 O SOT23
FDV301N_D87Z 功能描述:MOSFET 25V N-Ch FET 4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDV301N_NB9V005 功能描述:MOSFET N-Ch Digital Automotive Spec RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDV301N_NB9V008 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:25 V, 0.22 A N-Chan Digital FET