- 您现在的位置：买卖IC网 > PDF目录375786 > FDV303 (Fairchild Semiconductor Corporation) Digital FET, N-Channel PDF资料下载
参数资料
| 型号： | FDV303 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Digital FET, N-Channel |
| 中文描述： | 数字场效应管，N沟道 |
| 文件页数： | 2/4页 |
| 文件大小： | 65K |
| 代理商： | FDV303 |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
25
V
Breakdown Voltage Temp. Coefficient
26
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= 20 V, V
GS
= 0 V
1
μA
T
J
= 55°C
10
μA
I
GSS
ON CHARACTERISTICS
(Note)
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold Voltage
R
DS(ON)
Static Drain-Source On-Resistance
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
100
nA
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-2.6
mV /
o
C
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 4.5 V, I
D
= 0.5 A
0.65
0.8
1.5
V
0.33
0.45
T
J
=125°C
0.52
0.8
V
GS
= 2.7 V, I
D
= 0.2 A
V
GS
= 2.7 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 0.5 A
0.44
0.6
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
0.5
A
Forward Transconductance
1.45
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
50
pF
Output Capacitance
28
pF
Reverse Transfer Capacitance
9
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 6 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
3
6
ns
Turn - On Rise Time
8.5
18
ns
Turn - Off Delay Time
17
30
ns
Turn - Off Fall Time
13
25
ns
Total Gate Charge
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
1.64
2.3
nC
Gate-Source Charge
0.38
nC
Gate-Drain Charge
0.45
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
0.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
(Note)
0.83
1.2
V
Note:
Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDV303N Rev.D1
相关PDF资料 |
PDF描述 |
|---|---|
| FDV303N | Digital FET, N-Channel |
| FDV304 | Digital FET, P-Channel |
| FDV304P | Digital FET, P-Channel |
| FDV305N | 30V N-Channel PowerTrench MOSFET |
| FDW2501NZ | CAP, 10UF, 35V, -20+80% |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV303N | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23 |
| FDV303N_NB9U008 | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303N_Q | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303NFSC | 制造商:Fairchild Semiconductor Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。