参数资料
型号: FDV303
厂商: Fairchild Semiconductor Corporation
英文描述: Digital FET, N-Channel
中文描述: 数字场效应管,N沟道
文件页数: 4/4页
文件大小: 65K
代理商: FDV303
FDV303N Rev.D1
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 0.5A
10V
15V
V = 5V
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.03
0.1
0.3
1
3
5
V , DRAI N-SOURCE VOLTAGE (V)
I
D
V = 4.5V
SINGLE PULSE
R =357°C/W
T = 25°C
GS
JA
DC
1s
10ms
100ms
10s
RDSON LMT
1ms
0
0.01
0.1
1
10
100
300
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =357° C/W
T = 25°C
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 357 °C/W
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve
.
0.1
0.5
1
2
5
10
25
5
10
20
50
100
150
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0V
C ss
C ss
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
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相关代理商/技术参数
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FDV303NFSC 制造商:Fairchild Semiconductor Corporation 功能描述: