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参数资料
| 型号： | FDV303 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Digital FET, N-Channel |
| 中文描述： | 数字场效应管，N沟道 |
| 文件页数： | 3/4页 |
| 文件大小： | 65K |
| 代理商： | FDV303 |
FDV303N Rev.D1
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
0
0.3
0.6
0.9
1.2
1.5
3.5
3.0
2.7
2.5
2.0
1.5
D
V = 4.5V
R
D
)
0
0.2
0.4
I , DRAIN CURRENT (A)
0.6
0.8
1
1.2
0.5
1
1.5
2
D
V = 2.0V
2.7
3.0
4.5
3.5
2.5
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = 4.5 V
I =0.5 A
R
D
Figure 3.
On-Resistance Variation
with Temperature
.
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5.0V
J
Figure 5. Transfer Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
I
S
J
25°C
-55°C
V = 0V
Figure 6.
Body Diode Forward Voltage
Variation with Source Current and Temperature.
Figure 4.
On Resistance
Variation with
Gate-To- Source Voltage.
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
ID= 0.5A
R
D
125°C
25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV303N | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23 |
| FDV303N_NB9U008 | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303N_Q | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303NFSC | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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