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| 型号： | FDV305N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 0.9A SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 900mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 220 毫欧 @ 900mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 109pF @ 10V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDV305NDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
20
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A,Referenced to 25 ° C
15
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = 16 V,
V GS = 12 V,
V GS = –12 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
I D(on)
g FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V DS = V GS , I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
V GS = 4.5 V, I D = 0.9 A
V GS = 2.5 V, I D = 0.7 A
V GS = 4.5V, I D = 0.9 A, T J = 125 ° C
V GS = 4.5V, V DS = 5 V
V DS = 5V,
I D = 0.9 A
0.6
1
1
–3
164
235
220
3
1.5
220
300
303
V
mV/ ° C
m ?
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V,
f = 1.0 MHz
V GS = 0 V,
109
30
14
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 10 V,
V GS = 4.5 V,
V DS = 10 V,
V GS = 4.5 V
I D = 1 A,
R GEN = 6 ?
I D = 0.9 A,
4.5
7
8
1.4
1.1
0.26
9
14
16
2.8
1.5
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
0.29
A
V SD
t rr
Q rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0 V,
I F = 0.9 A,
d iF /d t = 100 A/μs
I S = 0.29 A
0.75
7.4
2.2
1.2
V
nS
nC
Notes:
1.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDV305N Rev D (W)
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相关代理商/技术参数 |
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| FDV305N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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